Planarization stop layer in phase change memory integration

Details Planarization stop layer in phase change memory integration Planarization stop layer in phase change memory integration

2011-07-26

2011-07-26

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having air-gap dielectric

C438S102000, C438S619000, C257S522000, C257SE21573

Reexamination Certificate

active

07985654

ABSTRACT:
A key hole structure and method for forming a key hole structure to form a pore in a memory cell. The method includes forming a first dielectric layer on a semiconductor substrate having an electrode formed therein, forming an isolation layer on the first dielectric layer, forming a second dielectric layer on the isolation layer, and forming a planarization stop layer on the second dielectric layer. The method further includes forming a via to extend to the first dielectric layer and recessing the isolation layer and the stop layer with respect to the second dielectric layer, depositing a conformal film within via and over the stop layer, forming a key hole within the conformal film at a center region of the via such that a tip of the key hole is disposed at an upper surface of the second dielectric layer, and planarizing the conformal film to the stop layer.

REFERENCES:
patent: 6407002 (2002-06-01), Lin et al.
patent: 7038289 (2006-05-01), Marty et al.
patent: 7732891 (2010-06-01), Tanaka et al.
patent: 2008/0061341 (2008-03-01), Lung
patent: 2008/0138929 (2008-06-01), Lung
patent: 2008/0138931 (2008-06-01), Lung
patent: 2009/0298223 (2009-12-01), Cheek et al.
M. Breitwisch, et al., “Novel Lithography-Independent Pore Phase Change Memory”, 2007 Symposium on VLSI Technology Digest of Technical Papers, pp. 100-101.

Affiliated with

Also associated with

Rating

Planarization stop layer in phase change memory integration does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Planarization stop layer in phase change memory integration, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Planarization stop layer in phase change memory integration will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2662723