Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-08-22
1998-02-03
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438697, H01L 214763
Patent
active
057144176
ABSTRACT:
The time needed to planarize the surface of an integrated circuit is reduced by causing the planarization liquid to settle in the presence of artificial gravity that supplements natural gravity. A number of different ways to achieve artificial gravity are described. These include centrifuging, magnetic repulsion, vertical pulling by a motor, and providing a pressure differential between the top and bottom sides of the wafer holder.
REFERENCES:
patent: 4973544 (1990-11-01), Slayman et al.
patent: 5264246 (1993-11-01), Ikeno
patent: 5348615 (1994-09-01), Gupta
patent: 5449644 (1995-09-01), Hong et al.
Ackerman Stephen B.
Berry Rence R.
Bowers Jr. Charles L.
Saile George O.
Vanguard International Semiconductor Corporation
LandOfFree
Planarization process using artificial gravity does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Planarization process using artificial gravity, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Planarization process using artificial gravity will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-662053