Planarization process for wide trench isolation

Details Planarization process for wide trench isolation Planarization process for wide trench isolation

1988-05-03

1989-06-06

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156648, 156653, 156657, 1566591, 156662, 20419237, 437 67, 437228, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

048368857

ABSTRACT:
A method of planarizing wide dielectric filled isolation trenches formed in the surface of a semiconductor surface is described. A self aligned mask is formed on the thick conformal layer of dielectric in the depressions over the wide trenches to protect the dielectric in those trenches from etching during planarization steps. The mask material is chosen to have etch characteristics different from the dielectric layer and a subsequent planarizing organic layer to allow selective etching of the mask material or dielectric without etching the other materials in the structure.

REFERENCES:
patent: 4385975 (1983-05-01), Chu et al.
patent: 4389281 (1983-06-01), Anantha et al.
patent: 4506434 (1985-03-01), Ogawa et al.
patent: 4545852 (1985-10-01), Barton
patent: 4654120 (1987-03-01), Dougherty
patent: 4671851 (1987-06-01), Beyer et al.
patent: 4671970 (1987-06-01), Keiser et al.
Bartush et al., "Dielectric Isolation Planarization," IBM Technical Disclosure Bulletin, vol. 21, No. 5, Oct. 1978, pp. 1868-1869.
Tsang, "Forming Wide Trench Dielectric Isolation," IBM Technical Disclosure Bulletin, vol. 25, No. 11B, Apr. 1983, pp. 6129-6130.

Affiliated with

Also associated with

Rating

Planarization process for wide trench isolation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Planarization process for wide trench isolation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Planarization process for wide trench isolation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-38727