Planarization process for double metal MOS using spin-on glass a

Details Planarization process for double metal MOS using spin-on glass a Planarization process for double metal MOS using spin-on glass a

1986-06-06

1987-06-30

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29576W, 29578, 29591, 156644, 156646, 156653, 156657, 156663, 427 38, 427 90, 427 93, B44C 122, C03C 1500, C03C 2506, C23F 102

Patent

active

046768670

ABSTRACT:
A method of providing a planar or iso-planar surface to the interlevel dielectric layer between metal layers of a multilevel MOS wafer includes applying a first dielectric over the first metal layer, applying a layer of spin-on glass over the first dielectric layer, etching the spin-on glass layer in an etch process in which the rate of etch of the spin-on glass is approximately the same as the rate of etch of the first dielectric to reveal at least a portion of the first dielectric layer. A second dielectric layer is placed over the surface of the first dielectric. Vias may then be defined through the dielectric layers, and the second metal layer may be applied over the relatively smooth surface of the second dielectric layer.

REFERENCES:
patent: 4470874 (1984-09-01), Bartush et al.
patent: 4492717 (1985-01-01), Pliskin et al.
patent: 4523975 (1985-06-01), Groves et al.
patent: 4545852 (1985-10-01), Barton
patent: 4576900 (1986-03-01), Chiang
Allied Chemicals Preliminary Information Bulletin, "ACCUGLASS.TM. 204 Spin-On Glass", Mar. 1985, pp. 1-3.
Allied Chemicals Product Safety Data Sheets, "ACCUGLASS.TM. M3R, M3RP, 103, 204", pp. 1-4.
Allied Chemicals Product Safety Data Sheet, "ACCUGLASS.RTM. Product Safety Data Sheet", 4 pages.

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