Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1987-04-01
1989-04-25
Lacey, David L.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156629, 156630, 156632, 156634, 156656, 156662, 156664, 156665, B44C 122, C23F 100
Patent
active
048245216
ABSTRACT:
A method for forming vertical metal interconnects on a semiconductor substrate having an uneven surface comprises first forming a laminated metal structure over the entire substrate. The laminated metal structure includes a first metallization sublayer, an intermediate etch stop barrier layer, and a second metallization sublayer. Usually, a barrier layer will be formed between the substrate and the laminated metal structure. The laminated metal structure is then patterned into the desired vertical metal interconnects, which interconnects are at different elevations because of the uneven underlying surface. The vertical metal interconnects are then planarized by first applying a dielectric layer and a sacrificial layer, etching back the combined dielectric and sacrificial layers to expose only the higher vertical metal interconnects, and then selectively etching back the second metal sublayer component of the higher vertical metal interconnects. By properly choosing the thicknesses of the various layers in the laminated metal structure, vertical metal interconnects having substantially identical elevations will be created.
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Castel Egil D.
Kulkarni Vivek D.
Colwell Robert C.
Fairchild Semiconductor Corporation
Heslin James M.
Johnson Lori-ann
Lacey David L.
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