Planarization of insulation film using low wettingness surface

Details Planarization of insulation film using low wettingness surface Planarization of insulation film using low wettingness surface

1994-12-01

1997-05-27

Chu, John S.

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438763, H01L 21465

Patent

active

056332084

ABSTRACT:
A planarization method comprises forming on an uneven surface an silicon oxide film having a low wettingness at least on its surface. The low wettingness of the silicon oxide film is obtained by increasing the silicon/oxygen atom ratio by means of argon sputtering or plasma CVD method. A silica solution is subsequently spin-coated onto the silicon oxide film. Since the surface of the silicon oxide film has a low wettingness, more of the coated silica solution stands on recessed portions than on raised portions, resulting in a flat surface of the coated solution. After the coated silica solution has been hardened, etching-back can be carried out until the coated silica solution is completely removed, thereby achieving the planarized surface of the silicon oxide film.

REFERENCES:
patent: 4676867 (1987-06-01), Elkins et al.
patent: 4775550 (1988-10-01), Chu et al.
patent: 4806504 (1989-02-01), Cleeves
patent: 4894351 (1990-01-01), Batty
patent: 5426076 (1995-06-01), Moghadam
patent: 5508233 (1996-04-01), Yost et al.
patent: 5514616 (1996-05-01), Rostoker et al.
patent: 5514624 (1996-05-01), Morozumi
by Takata, Y. et al., "A Highly Reliable Multilevel Interconnection Process for 0.6.mu.m CMOS Devices", VMIC Conference, IEEE, Jun. 11-12, 1991, pp. 13-19.

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