Planarization method by use of particle dispersion and subsequen

Details Planarization method by use of particle dispersion and subsequen Planarization method by use of particle dispersion and subsequen

1996-05-08

1998-11-17

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438646, 438760, 438782, 438783, H01L 2128, H01L 21304

Patent

active

058376038

ABSTRACT:
A method of smoothing irregularities in a surface of a semiconductor device using flowable particles which are dispersed onto the surface of the semiconductor device. The irregularities in the surface of the semiconductor device are filled with flowable particles smaller in size than the irregularities which are to be smoothed, and the particles are thereafter heated so that they flow and fill the irregularities, forming a smooth layer of flowable particle material which does not require polishing. The flowable particles may be mixed with non-flowable particles which are encapsulated in the layer of flowable particle material to form a homogeneous layer. The non-flowable particles may be augmentors which modify the properties of the layer. The particles may be dispersed with a spin-on process.

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Okuhura et al, "A Novel Global Planarization Process Using Gap Filling with Self-Aligned Silica Spacer", 1995 VMIC Conference, pp. 233-239, Jun. 1995.

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