Planarization method

Details Planarization method Planarization method

1989-09-29

1991-02-19

Nguyen, Nam X.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419212, 2041923, C23C 1434

Patent

active

049941623

ABSTRACT:
A three step planarization method for planarizing aluminum or aluminum alloy in via and trench features of a wafer includes first, high rate deposition in the absence of heat, followed by low rate deposition in the presence of heat, and finally, high rate deposition with continued supply of heat to the wafer. Bias may be used. Deposition is preferably continuous and uninterrupted from the beginning of the first step until the end of the third step. The first step is limited in duration in order to produce a relatively thin layer which geometrically covers the inside surfaces of the feature. The duration of the second step is selectable, but is preferably based upon the temperature of the heat applied to the wafer and a characteristic size of the feature. The third step deposition completes the thickness of the film.

REFERENCES:
patent: 4816126 (1989-03-01), Kamashida et al.

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