Planar type image sensor having electrodes on a photoelectric co

Details Planar type image sensor having electrodes on a photoelectric co Planar type image sensor having electrodes on a photoelectric co

1994-04-28

1995-08-08

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 57, 257 59, 257 72, 257292, H01L 2714

Patent

active

054401496

ABSTRACT:
An image sensor of a planar type is so arranged that a photo electric conversion layer is provided on an insulating substrate, a pair of electrodes are provided on the photoelectric conversion layer, and a p-type region and an n-type region are provided to the two electrodes respectively at locations at which light incident on a surface of said photoelectric conversion layer is unintercepted. On the photo electric conversion layer, there is a transparent protective layer but there is no p.sup.+ -type layer or a transparent electrode. The quantum efficiency and the blocking capability are enhanced with the leakage current being reduced.

REFERENCES:
patent: 4972252 (1990-11-01), Maekawa
patent: 5038190 (1991-08-01), Ito et al.
patent: 5262654 (1993-11-01), Yamazaki

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