Fishing – trapping – and vermin destroying
Patent
1989-03-27
1990-10-09
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 41, 437 39, 437 45, 437912, 357 22, H01L 21318
Patent
active
049620541
ABSTRACT:
In a method for manufacturing a field effect transistor, an inorganic material film is formed such that the film thickness of a resist pattern as a dummy gate or a refractory gate electrode in a gate region on a semiconductor substrate which faces a planned drain region is larger than the film thickness of a side wall facing a planned source region, and a impurities are doped into the semiconductor substrate at a high concentration using the resist pattern or the refractory gate electrode and the inorganic material film on the side walls thereof as the mask. As a result, the FET manufactured by the above process has a interval between the drain region and the gate electrode is larger than a interval between the source region and the gate electrode.
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patent: 4753898 (1988-06-01), Parrillo et al.
patent: 4769339 (1988-09-01), Ishii
Matsuo, S., et al., "Low Temperature Chemical Vapor Deposition Method Utilizing an Electron Cyclotron Resonance Plasma", Japanese J. Appl. Phys., vol. 22, No. 4, Apr. 1983, pp. L210-L212.
Hearn Brian E.
Quach T. N.
Sumitomo Electric Industries Ltd.
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