Planar TMBS rectifier

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S267000, C257SE33051

Reexamination Certificate

active

08044461

ABSTRACT:
A monolithically integrated trench FET and Schottky diode includes a plurality of trenches extending into a FET region and a Schottky region of a semiconductor layer. A trench in the Schottky region includes a dielectric layer lining the trench sidewalls, and a conductive electrode having a top surface that is substantially coplanar with a top surface of the semiconductor layer adjacent the trench. An interconnect layer electrically contacts the semiconductor layer in the Schottky region so as to form a Schottky contact with the semiconductor layer.

REFERENCES:
patent: 6479394 (2002-11-01), Choutov et al.
patent: 6498108 (2002-12-01), Cao et al.
patent: 7041600 (2006-05-01), Dokumaci et al.
patent: 7345342 (2008-03-01), Challa et al.
patent: 7732842 (2010-06-01), Session
patent: 2006/0267090 (2006-11-01), Sapp et al.
patent: 1790745 (2006-06-01), None
patent: 200834922 (2008-08-01), None
patent: WO 2008/070491 (2008-06-01), None
Chinese Office Action for Application No. 200780045391.7, mailed on Oct. 13, 2010, 17 pages.
Huang et al., “Characterization of SOG (spin on glass) fully etch back process for multilevel interconnection technology,” SPIE, 1995, pp. 289-298, vol. 2636.
Lazzi, et al., Semi-integrated SOG/TEOS etchback process for multimetal submicron devices,: SPIE, 1992, pp. 77-88, vol. 1803.
Notice of Allowance for U.S. Appl. No. 11/747,847, mailed on Jan. 25, 2010, 12 pages.
International Search Report of the International Searching Authority for Application No. PCT/US2007/085722, mailed on Jun. 18, 2008, 2 pages.
Written Opinion for Application No. PCT/US2007/085722, mailed on Jun. 18, 2008, 6 pages.
International Preliminary Report on Patentability for Application No. PCT/US2007/085722, mailed on Jun. 18, 2009, 8 pages.

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