Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2007-12-04
2009-12-15
Lam, David (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C365S158000, C365S230030, C365S054000, C365S063000
Reexamination Certificate
active
07633789
ABSTRACT:
Embodiments of the invention relate generally to a planar third dimensional memory with multi-port access, the planar third dimensional memory including memory planes composed of a plurality of memory layers. The memory layers can include non-volatile memory elements. The planar third dimensional memory can also include insulation layers, each being formed to separate a memory layer from another memory layer, and a logic plane configured to control access to the plurality of memory planes. In some cases, the memory planes can be formed vertically above the logic plane. The logic plane can be formed in a substrate, such as a semiconductor wafer, for example. The planar third dimensional memory can include a multi-port interface that can be configured to provide access between a plurality of ports and the plurality of memory planes.
REFERENCES:
patent: 6839269 (2005-01-01), Iwata et al.
patent: 7394717 (2008-07-01), Hidaka
Saleh, Res “SRAM Cell and col. I/O Design”, EECE481 Lecture 18, Dept. of ECE, University of British Columbia, Mar. 16, 2005, pp. 1-10.
Lam David
Unity Semiconductor Corporation
LandOfFree
Planar third dimensional memory with multi-port access does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Planar third dimensional memory with multi-port access, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Planar third dimensional memory with multi-port access will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4143678