Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1998-11-05
2000-04-11
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257393, 257752, 438152, 438158, 438692, H01L 2976, H01L 2170
Patent
active
060490934
ABSTRACT:
The disclosure includes preferred semiconductor transistor devices utilizing thin film transistors, as well as preferred methods of forming such devices. Specifically, a bottom thin film transistor gate is formed having a top surface. An insulating filler is provided adjacent the thin film transistor gate to an elevation at least as high as the thin film transistor gate top surface, and subsequently levelled to provide generally planar insulating surfaces adjacent the thin film transistor gate. The planar insulating surfaces are substantially coplanar with the thin film transistor gate top surface. A planar semiconductor thin film is then formed over the thin film transistor gate and over the adjacent planar insulating surfaces. The thin film is doped to form source and drain regions of a thin film transistor which is bottom gated by the thin film transistor gate.
REFERENCES:
patent: 4603468 (1986-08-01), Lam
patent: 4814841 (1989-03-01), Masuoka et al.
patent: 5034797 (1991-07-01), Yamanaka et al.
patent: 5064683 (1991-11-01), Poon et al.
patent: 5240871 (1993-08-01), Doan et al.
patent: 5262655 (1993-11-01), Ashida
patent: 5318920 (1994-06-01), Hayashide
patent: 5320975 (1994-06-01), Cederbaum et al.
patent: 5334861 (1994-08-01), Pfiester et al.
patent: 5411909 (1995-05-01), Manning et al.
patent: 5459688 (1995-10-01), Pfiester et al.
patent: 5468662 (1995-11-01), Havemann et al.
patent: 5691547 (1997-11-01), Manning et al.
Yuzuriha, K., et. al., "A Large Cell-Ratio And Low Node Leak 16M-bit SRAM Cell Using Ring-Gate Transistors", IEDM 91-485 (1991).
Itabashi, et. al., A Split Wordline Cell For 16Mb SRAM Using Polysilicon Sidewall Contacts, IEDM 91-477 (1991).
Hayden, J., et. al., "A High Performance Quadruple Well, Quadruple Poly BiCMOS Process For Fast 16Mb SRAMs", IEDM 92-819 (1992).
Dennison Charles H.
Manning H. Montgomery
Micro)n Technology, Inc.
Tran Minh Loan
LandOfFree
Planar thin film transistor formation does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Planar thin film transistor formation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Planar thin film transistor formation will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1178425