Planar SRAM including segment read circuit

Details Planar SRAM including segment read circuit Planar SRAM including segment read circuit

2007-10-16

2009-06-02

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S049170, C365S189150, C365S189170, C365S194000, C365S207000, C365S230030

Reexamination Certificate

active

07542331

ABSTRACT:
Bit lines in SRAM array are multi-divided, so that a segment read circuit is connected to local bit line, which circuit serves as amplifying transistor of an amplifier with load device of a block read circuit. Thus the amplified voltage is latched by a current mirror which serves as another amplifier in the block read circuit, such that one data is latched early but another data is latched later because the amplifier changes its output quickly or slowly depending on the local bit line voltage. In this manner, time-domain sensing scheme is introduced to differentiate fast data and slow data, where the locking signal is generated by a read enable signal or a reference signal based on fast data. Additionally, various alternatives and applications are described. Furthermore memory cell is fabricated in the conventional CMOS process environment with no additional steps.

REFERENCES:
patent: 5896336 (1999-04-01), McClure
patent: 6417032 (2002-07-01), Liaw
patent: 6829195 (2004-12-01), Uchida et al.
patent: 7151696 (2006-12-01), Suh et al.
patent: 7158428 (2007-01-01), Fujimoto

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