Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Field relief electrode
Patent
1982-09-29
1994-05-10
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
Field relief electrode
257409, 257630, 257652, 257659, H01L 2934
Patent
active
053110528
ABSTRACT:
Semiconductor component, including a semiconductor body having an edge, a surface, a substrate of a first given conductivity type, at least one zone being embedded in a planar manner in the substrate at the surface and being of a second conductivity type opposite the first given type, and insulating layer disposed on the surface, an electrode being in contact with the at least one zone, a channel stopper disposed on the insulating layer outside the at least one zone and in vicinity of the edge of the semiconductor body, the channel stopper being electrically connected to the substrate, and a field plate beind disposed on the insulating layer between the at least one zone and the channel stopper and being electrically connected to the at least one zone, the channel stopper being disposed at an increasing distance from the edge and the surface of the semiconductor body, as seen in direction toward the at least one zone.
REFERENCES:
patent: 3602782 (1971-08-01), Klein
patent: 3906539 (1975-09-01), Sauermann et al.
patent: 4024564 (1977-05-01), Shimada et al.
patent: 4074293 (1978-02-01), Kravitz
patent: 4134125 (1979-01-01), Adams et al.
C. G. Jambotkar, "Spaced field plate for increasing planar junction breakdown voltage", IBM Technical Disclosure Bulletin, vol. 19 (1976) pp. 478-479.
Publication "Siemens Forschungs-und Entwicklungsberichten" (Siemens Research and Development Reports) vol. 9 (1980), No. 4, p. 186.
Stengl Jens P.
Strack Helmut
Tihanyi Jeno
Carroll J.
Greenberg Laurence A.
Lerner Herbert L.
Siemens Aktiengesellschaft
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