Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2005-03-08
2005-03-08
Niebling, John F. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C438S642000, C438S759000
Reexamination Certificate
active
06864504
ABSTRACT:
A structure and method of forming a fully planarized polymer thin-film transistor by using a first planar carrier to process a first portion of the device including gate, source, drain and body elements. Preferably, the thin-film transistor is made with all organic materials. The gate dielectric can be a high-k polymer to boost the device performance. Then, the partially-finished device structures are flipped upside-down and transferred to a second planar carrier. A layer of wax or photo-sensitive organic material is then applied, and can be used as the temporary glue. The device, including its body area, is then defined by an etching process. Contacts to the devices are formed by conductive material deposition and chemical-mechanical polish.
REFERENCES:
patent: 4041204 (1977-08-01), Hepher et al.
patent: 4847732 (1989-07-01), Stopper et al.
patent: 5017989 (1991-05-01), Street et al.
patent: 5625199 (1997-04-01), Baumbach et al.
patent: 5677041 (1997-10-01), Smayling
patent: 5739193 (1998-04-01), Walpita et al.
patent: 5804836 (1998-09-01), Heeger et al.
patent: 5936259 (1999-08-01), Katz et al.
patent: 5946551 (1999-08-01), Dimitrakopoulos et al.
patent: 5981970 (1999-11-01), Dimitrakopoulos et al.
patent: 6207472 (2001-03-01), Callegari et al.
patent: 6429450 (2002-08-01), Mutsaers et al.
patent: 20020130828 (2002-09-01), Yamazaki et al.
Stanley Wolf and Richard N. Tauber, Silicon Processing for the VLSI Era, Lattice Press, vol. I, pg. 428.
Breen Tricia L.
Clevenger Lawrence A.
Hsu Louis L.
Wang Li-Kong
Wong Kwong Hon
Cheung, Esq. Wan Yee
Isaac Stanetta
McGinn & Gibb PLLC
Niebling John F.
LandOfFree
Planar polymer transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Planar polymer transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Planar polymer transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3420897