Planar P-N junction semiconductor structure with multilayer pass

Details Planar P-N junction semiconductor structure with multilayer pass Planar P-N junction semiconductor structure with multilayer pass

1996-05-14

1997-10-14

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

Field relief electrode

257494, 257495, 257636, 257640, 437233, 437239, 437244, H01L 2358

Patent

active

056775628

ABSTRACT:
A semiconductor device, which has a silicon body that includes at least one planar p-n junction that intersects a surface of the body, uses a multilayer arrangement that includes a first layer of thermally grown silicon dioxide, a second layer of Chemical-Vapor-Deposited (CVD) silicon nitride, a third layer of CVD oxygen-rich polysilicon, and a fourth layer of CVD silicon dioxide to passivate the junction. Common metallization contacts both the diffused region of the planar junction and the oxygen-rich polysilicon.

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