Planar oxidation method for producing a localised buried...

Details Planar oxidation method for producing a localised buried... Planar oxidation method for producing a localised buried...

2011-04-26

2011-04-26

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

C438S022000, C438S042000, C438S046000, C438S048000, C257S022000, C257S506000, C257S773000, C257SE21286

Reexamination Certificate

active

07932160

ABSTRACT:
The invention relates to a method of producing a semiconductor device, comprising the following steps consisting in: forming first, second and third semiconductor layers (1, 2, 3), whereby the first and second layers (1, 3) contain a smaller concentration of oxidizable species than the second layer (2); forming a mask (4) on the third layer (3); and oxidizing the second layer (2) with the diffusion of oxidizing species through the third layer (3).

REFERENCES:
patent: 5312518 (1994-05-01), Kadomura
patent: 5896408 (1999-04-01), Corzine et al.
patent: 6545335 (2003-04-01), Chua et al.
patent: 7208770 (2007-04-01), Kish et al.
patent: 2002/0182823 (2002-12-01), Yokouchi et al.
patent: 2003/0067009 (2003-04-01), Chua et al.
patent: 2003/0211642 (2003-11-01), Nohava et al.
patent: 2004/0264531 (2004-12-01), Ryou et al.
patent: 0 858 137 (1998-08-01), None
patent: 1 049 221 (2000-11-01), None

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