Planar magnetron sputtering source enabling a controlled sputter

Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering

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20419212, C23C 1435

Patent

active

052425665

ABSTRACT:
A planar magnetron sputtering source having a pair of pole pieces configured to produce a uniform coating, excellent step coverage and excellent step coverage uniformity of a wafer. Between the two pole pieces is a gap within which the magnetic field and electric field produce an electron trap. The shape of the gap produces a depth of sputter profile in the target that results in the uniform coating, excellent step coverage and excellent step coverage uniformity. The outer pole piece is bowl-shaped cross-section with a rim substantially coplanar with a planar inner pole piece.

REFERENCES:
patent: 4444643 (1984-04-01), Garrett
patent: 4498969 (1985-02-01), Ramachandran
patent: 4552639 (1985-11-01), Garrett
patent: 4714536 (1987-12-01), Freeman
Sheet of Drawings for FIGS. 1A and 1B, illustrating the CONMAG 1 and CONMAG II systems of Varian Associates.
Sheet of drawings for FIG. 2, illustrating a 1000 Series sputtering system by Anelva.
Copending application (as cited in patent application Ser. No. 07/512,719); entitled "Planar Magnetron Sputtering Source Producing Improved Coating Thickness Uniformity, Step Coverage and Step Coverage Uniformity" Inventor: Avi Tepman; Filed on Mar. 30, 1990 under U.S. Ser. No. 07/502,391.

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