Planar ion-implanted GaAs MESFETS with improved open-channel bur

Details Planar ion-implanted GaAs MESFETS with improved open-channel bur Planar ion-implanted GaAs MESFETS with improved open-channel bur

1995-11-21

1996-10-15

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

055656960

ABSTRACT:
An improved substantially planar and easy to manufacture field-effect-transistor (FET) includes a guard region between an n.sup.+ drain region and the remainder of the device, which enables the breakdown voltage of the FET to be substantially increased under open-channel conditions without adversely impacting other important device characteristics.

REFERENCES:
patent: 4396437 (1983-08-01), Kvok et al.
patent: 4574298 (1986-03-01), Yamagishi et al.
patent: 4674174 (1987-06-01), Kishita et al.
patent: 4956308 (1990-09-01), Griffin et al.

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