Planar integrated circuit including a plasmon waveguide-fed...

Details Planar integrated circuit including a plasmon waveguide-fed... Planar integrated circuit including a plasmon waveguide-fed...

2007-01-30

2007-01-30

Owens, Douglas W. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C385S129000, C385S040000, C359S034000, C362S610000

Reexamination Certificate

active

10854075

ABSTRACT:
A planar integrated circuit includes a semiconductor substrate having a substrate surface and a trench in the substrate, a waveguide medium in the trench having a top surface and a light propagation axis, the trench having a sufficient depth for the waveguide medium to be at or below said substrate surface, and at least one Schottky barrier electrode formed on the top surface of said waveguide medium and defining a Schottky barrier detector consisting of the electrode and the portion of the waveguide medium underlying the Schottky barrier electrode, at least the underlying portion of the waveguide medium being a semiconductor and defining an electrode-semiconductor interface parallel to the light propagation axis so that light of a predetermined wavelength from said waveguide medium propagates along the interface as a plasmon-polariton wave.

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Sellai, A., and Dawson, P., “Quantum efficiency in GaAs Schottky photodetectors with enhancement due to surface plasmon excitations”,Solid State Electronics, vol. 46, 2002, pp. 29-33.

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