Planar field effect transistor structure having an angled...

Details Planar field effect transistor structure having an angled... Planar field effect transistor structure having an angled...

2011-06-21

2011-06-21

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S019000, C257S288000, C257S368000, C257S395000, C257S396000, C257S397000, C257S622000, C257SE21549, C257SE29255, C257SE29277, C257SE29279, C257SE29020, C257SE29023, C257SE29021, C438S221000, C438S222000, C438S300000

Reexamination Certificate

active

07964910

ABSTRACT:
Disclosed is a transistor that incorporates epitaxially deposited source/drain semiconductor films and a method for forming the transistor. A crystallographic etch is used to form recesses between a channel region and trench isolation regions in a silicon substrate. Each recess has a first side, having a first profile, adjacent to the channel region and a second side, having a second profile, adjacent to a trench isolation region. The crystallographic etch ensures that the second profile is angled so that all of the exposed recess surfaces comprise silicon. Thus, the recesses can be filled by epitaxial deposition without divot formation. Additional process steps can be used to ensure that the first side of the recess is formed with a different profile that enhances the desired stress in the channel region.

REFERENCES:
patent: 6737716 (2004-05-01), Matsuo et al.
patent: 6835246 (2004-12-01), Zaidi
patent: 6885084 (2005-04-01), Murthy et al.
patent: 6946371 (2005-09-01), Langdo et al.
patent: 6960781 (2005-11-01), Currie et al.
patent: 2005/0156255 (2005-07-01), Yao et al.
patent: 2005/0158937 (2005-07-01), Yang et al.
patent: 2005/0285192 (2005-12-01), Zhu
patent: 2005/0285203 (2005-12-01), Fukutome et al.
patent: 2006/0138398 (2006-06-01), Shimamune et al.
patent: 2007/0238242 (2007-10-01), Ting et al.
patent: 2008/0283906 (2008-11-01), Bohr

Affiliated with

Also associated with

Rating

Planar field effect transistor structure having an angled... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Planar field effect transistor structure having an angled..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Planar field effect transistor structure having an angled... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2724116