Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
1999-06-15
2001-10-16
Nelms, David (Department: 2818)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C438S018000
Reexamination Certificate
active
06305000
ABSTRACT:
TECHNICAL FIELD
This invention relates generally to the design and manufacture of electronic circuits and more particularly relates to the addition of conductive fill stripes to satisfy metal density requirements and improve circuit performance.
BACKGROUND OF THE INVENTION
Electronic circuits comprise layers of semiconductor materials doped with specific elements or combination of elements to make them more or less conductive. It is the predictable and controlled movement of electrons or holes through these semiconductor materials that enable logic to be manipulated in transistors and other integrated devices. Ultimately, electronic circuits in microprocessors and computers are nothing more than multitudes of these integrated logic and storage devices interconnected with each other. These integrated devices are interconnected in electronic circuits with each other using metal layers in horizontal planes above the integrated devices. These metal layers, up to eight or more, are referred to M
1
, M
2
, M
3
, etc. have signal routing and power distribution on them. These metal layers are not necessarily identical to each other. Throughout the metal layers, there is a combination of conductors in which the power distribution supplies bias voltages and ground paths to the integrated devices whereas signal routing supplies signals generated by the devices and transferred to other devices. These power and signal conductors have a minimum spacing which when combined with the minimum allowable conductor width is known as wiring pitch.
Typically integrated devices and electronic circuits are created on the computer using a design space which is nothing more than the set of possible designs and design parameters that meet a specific product requirement. Exploring design space means evaluating the various design options possible with a given technology and optimizing with respect to specific constraints such as power or cost. For a particular semiconductor process technology, such as 0.5 micron CMOS, there are corresponding design rules that state the allowable limits for feature size, feature separation, layer-to-layer overlap, layer-to-layer feature separation, etc. used in the design and layout of integrated circuits. After an integrated circuit has been designed, the design is checked for compliance with the constraints imposed by these design rules, usually by a computerized design rule checker (DRC).
Silicon technology and integrated circuits have evolved to a point where the geometry of transistors and wires are so small with an increase in corresponding circuit density that it is becoming increasingly difficult to manufacture silicon chips with good yield and tolerances. Copper technology is especially sensitive to manufacturing process variations because of its smaller size. The design rules of manufacturers require that all wiring levels on these electronic circuits have a minimum usage requirement, i.e., a minimum density of metal per area, across all portions of the circuit to achieve consistent metal distribution across a wafer to improve manufacturing yield and reliability. For instance, one of these design rules for silicon technology require that all metal levels from M
1
to M
5
have a minimum density requirement of twenty percent or larger per area of one hundred square microns. The minimum density requirement for the thicker metal levels are ten percent or larger per one hundred square microns area.
FIG. 1
is a layout of conductors, also called buses, of two metal layers of an electronic circuit
10
. Metal layer M
2
has power distribution and signal routing in which the power distribution comprise ground conductors
210
a
and
210
b,
bias voltage conductor
230
a,
and signal routing
270
a,
270
b,
. . .
270
f
. . .
270
z.
Another metal layer M
3
lies in a plane above the first metal layer M
2
with conductors running perpendicularly to those conductors in metal layer M
2
. Metal layer M
3
shows power distribution comprising ground conductors
310
a
and
310
b
and a bias voltage conductor
330
a.
There may or may not be an intermediate metal layer between metal layers M
2
and M
3
but it is not shown in FIG.
1
. The layout of the power distribution and signal routing of the electronic circuit
10
of
FIG. 1
is considered ideal because the ground conductors are equally spaced from the bias voltage conductors and because the signal routing is equally spaced and uniformly interspersed among the power distribution. The conductors of the power distribution are ideally the same size, as are the signal routing albeit a different size than the ground and voltage conductors. When bias voltages are applied to the conductors and when signals are routed through the signal routing, the power and resultant heating will be equally dissipated over the area of the electronic circuit
10
of FIG.
1
.
FIG. 2
illustrates a more realistic electronic circuit
20
having two metal layers M
2
and M
3
positioned one above the other with the power distribution and signal routing as shown in
FIG. 1
with the exception that there are fewer signal conductors in metal layer M
2
. In the M
2
layer of
FIG. 2
, there are only three signal conductors
270
c,
270
f,
and
270
z.
As can be seen in
FIG. 2
, there are empty regions
11
,
13
,
15
,
17
, and
19
between the power distribution conductors of both the M
2
and M
3
layers and the signal routing
270
c,
270
f,
and
270
z.
These empty regions
11
,
13
,
15
,
17
, and
19
violate the minimum area usage requirement for metal, especially in sensitive copper technologies as mentioned.
In the electronic circuit
20
of
FIG. 2
, the design rules and the manufacturing processes require that the empty regions
11
,
13
,
15
,
17
, and
19
be filled with metal or other conductors to satisfy a particular minimum usage requirement. In actuality, however, meeting the design rules is not as easy as placing conductors at regular intervals in a metal layer as shown in FIG.
1
. Some logic or storage devices are busier than others, some devices require larger operating bias voltages, etc. Thus, in real life, some areas of the electronic circuit are more dense and consume more power and/or generate more signals than other areas of the electronic circuit. These variations of use and power must be considered when meeting minimum usage requirements.
One technique used to fill the areas is the “sprinkle” fill approach undertaken after the chip has been designed but before it is manufactured. The sprinkle fill approach does in fact satisfy the design rules check for minimum area of metal usage but it has several shortcomings.
FIG. 3
illustrates the layout of two metal layers M
2
and M
3
of
FIG. 2
but empty regions
11
,
13
,
15
,
17
, and
19
and other empty regions have been filled with small floating metal conductors labeled
240
a,
240
b,
240
c
. . .
240
q
in the M
2
layer using the sprinkle fill approach. One of the most serious shortcomings is that these metal fills are floating, i.e., they are not electrically connected to either the power distribution or the signal routing. Unexpected line-to-line coupling and vertical coupling between metal planes result from the use of the floating metal fills and causes unpredictable electrical and performance problems. Another problem is that the metal fills
240
a
. . .
240
q
are added after the chip design is completed and so are not considered during the normal design process. As any skilled circuit designer is aware, late changes to a design causes problems, such as accidental shorts between signals, and complicates the design and may cause delays if necessary to redesign circuits to correct problems created by the late insertion of these floating metal fills. Yet, another problem is that a large number of spaces have to be filled necessarily increasing the data volume making full chip logical to physical verification (Layout vs. Schematic—LVS) nearly impossible. Because of the checking problems with DRC and comparison of the actual layout of the chip agai
Phan Nghia Van
Rohn Michael James
International Business Machines - Corporation
Le Thong
Nelms David
Nock James R.
Ojanen Karuna
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