Pixel with transfer gate with no isolation edge

Details Pixel with transfer gate with no isolation edge Pixel with transfer gate with no isolation edge

2005-07-12

2008-11-11

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S072000, C257SE27131

Reexamination Certificate

active

07449736

ABSTRACT:
A pixel and imager device, and method of forming the same, where the pixel has a transfer transistor gate associated with a photoconversion device and is isolated in a substrate by shallow trench isolation. The transfer transistor gate does not overlap the shallow trench isolation region.

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EP O.A. dated Jun. 13, 2008 with Written Opinion.

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