Pixel structure with semiconductor of top-gate TFT extended...

Details Pixel structure with semiconductor of top-gate TFT extended... Pixel structure with semiconductor of top-gate TFT extended...

2009-02-10

2011-12-27

Nguyen, Hoan (Department: 2871)

Liquid crystal cells, elements and systems

Particular excitation of liquid crystal

Electrical excitation of liquid crystal

C349S042000, C349S043000, C349S046000, C345S092000, C257S059000, C257S072000

Reexamination Certificate

active

08085354

ABSTRACT:
A pixel structure is disclosed. The pixel structure is suitable to be disposed on a substrate and includes a first pixel electrode, a second pixel electrode and a top gate TFT. The first pixel electrode and the second pixel electrode are disposed over the substrate, wherein the first pixel electrode and the second pixel electrode are separated from each other. The top gate TFT is disposed between the substrate and the first pixel electrode and includes a patterned semiconductor layer and a gate.

REFERENCES:
patent: 7250996 (2007-07-01), Yoshida et al.
patent: 2005/0185120 (2005-08-01), Kitoh et al.
patent: 2006/0091387 (2006-05-01), Yamazaki
patent: 2006/0268186 (2006-11-01), Kamada et al.
patent: 2008/0121893 (2008-05-01), Kim et al.
patent: 2008/0239227 (2008-10-01), Fan Jiang et al.
patent: 2009/0079892 (2009-03-01), Hsien et al.

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