Pixel structure of a thin film transistor liquid crystal...

Details Pixel structure of a thin film transistor liquid crystal... Pixel structure of a thin film transistor liquid crystal...

2011-05-10

2011-05-10

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S257000, C257S290000, C257S303000, C257SE31053

Reexamination Certificate

active

07939875

ABSTRACT:
A method of fabricating a pixel structure of a thin film transistor liquid crystal display is provided. A transparent conductive layer and a first metallic layer are sequentially formed over a substrate. The first metallic layer and the transparent conductive layer are patterned to form a gate pattern and a pixel electrode pattern. A gate insulating layer and a semiconductor layer are sequentially formed over the substrate. A patterning process is performed to remove the first metallic layer in the pixel electrode pattern while remaining the gate insulating layer and the semiconductor layer over the gate pattern. A second metallic layer is formed over the substrate. The second metallic layer is patterned to form a source/drain pattern over the semiconductor layer. A passivation layer is formed over the substrate and then the passivation layer is patterned to expose the transparent conductive layer in the pixel electrode pattern.

REFERENCES:
patent: 6847413 (2005-01-01), Park et al.
patent: 2004/0169991 (2004-09-01), Nagata et al.
patent: 2005/0134752 (2005-06-01), Yang et al.

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