Pixel structure and methods for fabricating, detecting, and...

Details Pixel structure and methods for fabricating, detecting, and... Pixel structure and methods for fabricating, detecting, and...

2007-01-26

2011-10-04

Pert, Evan (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

C257S059000, C257S618000, C438S004000, C438S014000, C438S034000, C438S038000, C324S701000, C349S192000

Reexamination Certificate

active

08030650

ABSTRACT:
A pixel structure comprises at least two scan and data lines. The scan and data lines substantially intersects one another to form at least one region therein. The pixel structure further comprises at least one thin film transistor, at least one passivation layer, at least one defect detection pattern, and at least one pixel electrode. The pixel electrode is disposed on the passivation layer and electrically connected to the thin film transistor via an opening of the passivation layer. The defect detection pattern is disposed in the region to detect whether any residue remains therebelow.

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