Pixel structure and method for manufacturing the same

Details Pixel structure and method for manufacturing the same Pixel structure and method for manufacturing the same

2008-02-29

2010-11-16

Arora, Ajay K (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257SE27112, C257SE21700, C438S155000, C438S158000

Reexamination Certificate

active

07834354

ABSTRACT:
A pixel structure of a fringe field switching liquid crystal display (FFS-LCD) and a method for manufacturing the pixel structure are provided. Compared to the conventional method of using seven photolithography-etching processes for manufacturing a pixel structure, the method of the present invention uses only six photolithography-etching processes that save manufacturing costs and time. Furthermore, the pixel structure thereby only comprises two insulating layers, and thus, the light transmittance thereof can be increased in comparison to the conventional pixel structure comprising three insulating layers.

REFERENCES:
patent: 2005/0128399 (2005-06-01), Kim et al.
patent: 2006/0146245 (2006-07-01), Ahn et al.
patent: 1797157 (2006-07-01), None
Chinese language office action dated Mar. 27, 2009.

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