Pixel structure

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S072000, C257S581000, C257SE27131, C257SE27132, C257SE27152, C257SE29277

Reexamination Certificate

active

10905764

ABSTRACT:
A pixel structure controlled by a scan line and a data line on a substrate is provided. The pixel structure comprises a thin film transistor, a resistance wire, a first pixel electrode, and a second pixel electrode, which are disposed on the substrate. Additionally, the thin film transistor is electrically connected to the scan line, the data line, and the resistance wire. Further, the first pixel electrode is electrically connected to the thin film transistor and the second pixel electrode is electrically connected to the thin film transistor by the resistance wire. Especially, a method of manufacturing a pixel structure is also provided.

REFERENCES:
patent: 6515728 (2003-02-01), Song et al.

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