Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-20
2007-02-20
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S072000, C257S581000, C257SE27131, C257SE27132, C257SE27152, C257SE29277
Reexamination Certificate
active
10905764
ABSTRACT:
A pixel structure controlled by a scan line and a data line on a substrate is provided. The pixel structure comprises a thin film transistor, a resistance wire, a first pixel electrode, and a second pixel electrode, which are disposed on the substrate. Additionally, the thin film transistor is electrically connected to the scan line, the data line, and the resistance wire. Further, the first pixel electrode is electrically connected to the thin film transistor and the second pixel electrode is electrically connected to the thin film transistor by the resistance wire. Especially, a method of manufacturing a pixel structure is also provided.
REFERENCES:
patent: 6515728 (2003-02-01), Song et al.
Au Optronics Corporation
Flynn Nathan J.
Jiang Chyun IP Office
Wilson Scott R.
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