Pixel sensor with reduced image lag

Details Pixel sensor with reduced image lag Pixel sensor with reduced image lag

2008-04-08

2010-06-08

Menz, Douglas M (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S048000

Reexamination Certificate

active

07732845

ABSTRACT:
A tensile-stress-generating structure is formed above a gate electrode in a CMOS image sensor to apply a normal tensile stress between a charge collection well of a photodiode, which is also a source region of a transfer transistor, and a floating drain in the direction connecting the source region and the floating drain. The tensile stress lowers the potential barrier between the source region and the body of the transfer transistor to effect a faster and more through transfer of the electrical charges in the source region to the floating drain. Image lag is thus reduced in the CMOS image sensor. Further, charge capacity of the source region is also enhanced due to the normal tensile stress applied to the source region.

REFERENCES:
patent: 6380558 (2002-04-01), Yamazaki et al.
patent: 6750912 (2004-06-01), Tennant et al.
patent: 7164182 (2007-01-01), Mouli
patent: 2007/0057298 (2007-03-01), Mouli
patent: WO2005008782 (2005-01-01), None

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