Pixel sensor having doped isolation structure sidewall

Details Pixel sensor having doped isolation structure sidewall Pixel sensor having doped isolation structure sidewall

2006-11-28

2006-11-28

Kebede, Brook (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257SE27133

Reexamination Certificate

active

07141836

ABSTRACT:
A novel pixel sensor structure formed on a substrate of a first conductivity type includes a photosensitive device of a second conductivity type and a surface pinning layer of the first conductivity type. An isolation structure is formed adjacent to the photosensitive device pinning layer. The isolation structure includes a dopant region comprising material of the first conductivity type selectively formed along a sidewall of the isolation structure that is adapted to electrically couple the surface pinning layer to the underlying substrate. The corresponding method for forming the dopant region selectively formed along the sidewall of the isolation structure comprises an out-diffusion process whereby dopant materials present in a doped material layer formed along selected portions in the isolation structure are driven into the underlying substrate during an anneal. Alternately, or in conjunction, an angled ion implantation of dopant material in the isolation structure sidewall may be performed by first fabricating a photoresist layer and reducing its size by removing a corner, or a corner portion thereof, which may block the angled implant material.

REFERENCES:
patent: 5516711 (1996-05-01), Wang
patent: 6500692 (2002-12-01), Rhodes
patent: 6509221 (2003-01-01), Doris et al.
patent: 6551910 (2003-04-01), Ohashi
patent: 6611037 (2003-08-01), Rhodes
patent: 6730980 (2004-05-01), Rhodes
patent: 6767759 (2004-07-01), Rhodes
patent: 2004/0173799 (2004-09-01), Patrick
patent: 2004/0178430 (2004-09-01), Rhodes et al.
patent: 2005/0151218 (2005-07-01), Mouli

Affiliated with

Also associated with

Rating

Pixel sensor having doped isolation structure sidewall does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Pixel sensor having doped isolation structure sidewall, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pixel sensor having doped isolation structure sidewall will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3699881