Pixel sensor cell with frame storage capability

Television – Camera – system and detail – Solid-state image sensor

Reexamination Certificate

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C250S208100

Reexamination Certificate

active

08009215

ABSTRACT:
A set of frame transfer transistors are provided between a hold gate transistor and a transfer gate transistor of a CMOS image sensor to enable storage of charge generate in the photosensitive diode after exposure. The readout of the charges from the set of frame transfer transistors may be performed after a plurality of exposures of the CMOS image sensor, between each of which charges are shifted toward the transfer gate transistor within the set of frame transfer transistors. Useful operation modes are enabled including a burst mode operation for rapid capture of successive images and high dynamic range operations in which multiple images are taken with different exposure times or a large capacitance is provided by ganging the diffusions of the set of frame transfer transistors.

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U.S. Offfice Action dated Sep. 30, 2010 issued in U.S. Appl. No. 12/174,289.

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