Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2007-04-17
2007-04-17
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257SE27005, C257S046000
Reexamination Certificate
active
10907570
ABSTRACT:
A pixel sensor cell structure and method of manufacture. The pixel cell comprises a doped layer formed adjacent to a first side of a transfer gate structure for coupling a collection well region and a channel region. Potential barrier interference to charge transfer caused by a pinning layer is reduced.
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Adkisson James W.
Bryant Andres
Ellis-Monaghan John
Gambino Jeffrey P.
Jaffe Mark D.
Canale Anthony J.
Le Thao P.
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