Pixel sensor cell for collecting electrons and holes

Details Pixel sensor cell for collecting electrons and holes Pixel sensor cell for collecting electrons and holes

2005-08-08

2008-10-21

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S292000

Reexamination Certificate

active

07439561

ABSTRACT:
The present invention is a pixel sensor cell and method of making the same. The pixel sensor cell approximately doubles the available signal for a given quanta of light. The device of the present invention utilizes the holes produced by impinging photons in a pixel sensor cell circuit. A pixel sensor cell having reduced complexity includes an n-type collection well region formed beneath a surface of a substrate for collecting electrons generated by electromagnetic radiation impinging on the pixel sensor cell and a p-type collection well region formed beneath the surface of the substrate for collecting holes generated by the impinging photons. A circuit structure having a first input is coupled to the n-type collection well region and a second input is coupled to the p-type collection well region, wherein an output signal of the pixel sensor cell is the magnitude of the difference of a signal of the first input and a signal of the second input.

REFERENCES:
patent: 4598305 (1986-07-01), Chiang et al.
patent: 5608243 (1997-03-01), Chi et al.
patent: 5874993 (1999-02-01), Ciccarelli et al.
patent: 5973735 (1999-10-01), Stekelenburg et al.
patent: 6194702 (2001-02-01), Hook et al.
patent: 2002/0024071 (2002-02-01), Kawajiri et al.

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