Pixel sensing circuit

Details Pixel sensing circuit Pixel sensing circuit

2011-07-12

2011-07-12

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S401000, C257SE27132

Reexamination Certificate

active

07977717

ABSTRACT:
Systems and methods of pixel sensing circuits. In accordance with a first embodiment of the present invention, a pixel sensing circuit includes a floating diffusion functionally coupled to and surrounded by a ring transfer gate. The ring transfer gate is functionally coupled to and surrounded by a photo diode. The photo diode may be surrounded by a region of poly silicon. The disclosed structure provides radiation hardening and low light performance.

REFERENCES:
patent: 5625210 (1997-04-01), Lee et al.
patent: 6690074 (2004-02-01), Dierickx et al.
patent: 2008/0258187 (2008-10-01), Ladd et al.
U.S. Appl. No. 61/155,473: Innocent, Manuel “Low Leakage Pinned Photo Diode Using Ring Transfer Gate;” filed Feb. 25, 2009; 51 pages.
Hughes et al. “Radiation effects and hardening of MOS technology: devices and circuits;” IEEE Transactions on Nuclear Science; Jun. 2003; <http://ieeexplore.ieee.org/stamp>; 22 pages.
Mavis et al. “Employing radiation hardness by design techniques with commercial integrated circuit process;” in Proc. Digital Avionics System Conference (16th DASC, AIAA/IEEE); 1997; 8 pages.
Bogaerts et al. “Total Dose and displacement damage effects in a radiation-hardened CMOS APS;” IEEE Transactions on Electron Devices; Jan. 2003; <http://ieeexplore.ieee.org/stamp>; 7 pages.
Lee et al. “Active pixel sensor integrated with a pinned photodiode;” U.S. Patent 5,625,210; Apr. 29, 1997; 9 pages.

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