Pixel of image sensor and method for fabricating the same

Details Pixel of image sensor and method for fabricating the same Pixel of image sensor and method for fabricating the same

2006-06-01

2010-12-14

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Charge transfer device

C257S239000, C257SE21617

Reexamination Certificate

active

07851275

ABSTRACT:
A pixel of an image sensor includes a polysilicon layer, and an active region which needs to be electrically coupled with the polysilicon layer, wherein the polysilicon layer extends over a portion of the active region, such that the polysilicon layer and the active region are partially overlapped, and the polysilicon layer and the active region are coupled through a buried contact structure.

REFERENCES:
patent: 6291280 (2001-09-01), Rhodes
patent: 6545301 (2003-04-01), Kamimura
patent: 2002/0048871 (2002-04-01), Sekikawa et al.
patent: 2004/0217398 (2004-11-01), Lee
patent: 2004/0217426 (2004-11-01), Lee
patent: 10-2004-0093936 (2004-11-01), None

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