Pitch by splitting bottom metallization layer

Details Pitch by splitting bottom metallization layer Pitch by splitting bottom metallization layer

2007-06-25

2010-06-15

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S736000, C257SE23019, C257S758000

Reexamination Certificate

active

07737554

ABSTRACT:
An integrated circuit structure includes a semiconductor substrate; a first bottom metallization (M1) layer over the semiconductor substrate; a second M1layer over the first M1layer, wherein metal lines in the first and the second M1layer have widths of greater than about a minimum feature size; and vias connecting the first and the second M1layers.

REFERENCES:
patent: 6239025 (2001-05-01), Bease et al.
patent: 7006370 (2006-02-01), Ramesh et al.
patent: 2004/0140569 (2004-07-01), Meguro et al.

Affiliated with

Also associated with

Rating

Pitch by splitting bottom metallization layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Pitch by splitting bottom metallization layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pitch by splitting bottom metallization layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4186554