Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing
Reexamination Certificate
2011-05-03
2011-05-03
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Read/write circuit
Flip-flop used for sensing
C365S189080, C365S189090, C365S207000
Reexamination Certificate
active
07936625
ABSTRACT:
Various embodiments are generally directed to a method and apparatus for carrying out a pipeline sensing operation. In some embodiments, a read voltage from a first memory cell is stored in a voltage storage element (VSE) and compared to a reference voltage to identify a corresponding memory state of the first memory cell while a second read voltage from a second memory cell is stored in a second VSE. In other embodiments, bias currents are simultaneously applied to a first set of memory cells from the array while read voltages generated thereby are stored in a corresponding first set of VSEs. The read voltages are sequentially compared with at least one reference value to serially output a logical sequence corresponding to the memory states of the first set of memory cells while read voltages are stored for a second set of memory cells in a second set of VSEs.
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Huang Henry F.
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Nguyen Hien N
Nguyen Vanthu
Seagate Technology LLC
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