PIN diode with a low peak-on effect

Details PIN diode with a low peak-on effect PIN diode with a low peak-on effect

1991-07-15

1993-01-19

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

In integrated circuit

257458, 257656, H01L 2990, H01L 2974

Patent

active

051810832

ABSTRACT:
A PIN diode with a low voltage peak at the switching on comprises a P-type anode region (4) formed on a first surface of a low doped N-type substrate (1) and a cathode region (2) formed on the second surface of the substrate. The PIN diode comprises on a portion of the first surface an additional N.sup.+ -type region (7) in contact with the anode region for forming a junction with the latter. The additional region is connected to the cathode region.

REFERENCES:
patent: 4109274 (1978-08-01), Belenkov et al.
patent: 4267557 (1981-05-01), Muramoto et al.
patent: 4282555 (1981-08-01), Svedberg
patent: 4309714 (1982-01-01), Slatter
patent: 4672402 (1987-06-01), Yamaoka et al.

Affiliated with

Also associated with

Rating

PIN diode with a low peak-on effect does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with PIN diode with a low peak-on effect, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and PIN diode with a low peak-on effect will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-105022