Pin diode device and architecture

Details Pin diode device and architecture Pin diode device and architecture

2011-03-29

2011-03-29

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Systems using particular element

Semiconductive

C365S115000, C365S100000, C365S148000, C365S230060, C365S189040

Reexamination Certificate

active

07916529

ABSTRACT:
A memory architecture that employs one or more semiconductor PIN diodes is provided. The memory employs a substrate that includes a buried bit/word line and a PIN diode. The PIN diode includes a non-intrinsic semiconductor region, a portion of the bit/word line, and an intrinsic semiconductor region positioned between the non-intrinsic region and the portion of the bit/word line.

REFERENCES:
patent: 6021066 (2000-02-01), Lam
patent: 7120062 (2006-10-01), La Malfa et al.
patent: 7120063 (2006-10-01), Liu et al.
patent: 7324374 (2008-01-01), Shieh et al.
patent: 7372743 (2008-05-01), Yano et al.
patent: 7385851 (2008-06-01), Park et al.
patent: 7433228 (2008-10-01), Kuo et al.
patent: 7561465 (2009-07-01), Hancock et al.
patent: 2009/0034355 (2009-02-01), Wang
Lee, K. J. et al., “A 90nm 1.8V 512Mb Diode-switch PRAM with 266MB/s Read Throughput,” 2007 IEEE International Solid-state Circuits Conference, Digest of Technical Papers, vol, 50, Feb. 2007, p. 472.
Oh, J. H. et al., “Full Integration of Highly Manufacturable 512Mb PRAM based on 90nrn Technology,” IEDM 2006, Technical Digest, 5 pages.
Hosoi, Y. et al., “High Speed Unipolar Switching Resistance RAM(RRAM) Technology,” IEDM 2006, Technical Digest, 5 pages.
Song, Y. J. et al., “Highly Reliable 256Mb PRAM with Advanced Ring Contact Technology and Novel Encapsulating Technology,” 2006 Symposium on VLSI Technology Digest of Technical Papers, 2 pages.

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