Pillar emitter for BiCMOS devices

Details Pillar emitter for BiCMOS devices Pillar emitter for BiCMOS devices

1992-10-19

2000-01-04

Ostrowski, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257205, H01L 2980, H01L 31112

Patent

active

060112832

ABSTRACT:
A monolithic semiconductor device includes a field effect transistor and a bipolar junction transistor with a pillar emitter structure. The pillar structure raises the BJT emitter above the surface of a trenched base. Ions implanted into the base trench diffuses into an extrinsic base contact region. The pillar elevation structure increases travel distance between the trench and the emitter and protects against encroachment without increasing the total emitter area allocated to the BJT device. A spacer oxide adjacent to the pillar separates the pillar from the trench-region implanted with ions.

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