Pillar cell flash memory technology

Details Pillar cell flash memory technology Pillar cell flash memory technology

2006-05-23

2006-05-23

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S316000

Reexamination Certificate

active

07049652

ABSTRACT:
An array of a pillar-type nonvolatile memory cells (803) has each memory cell isolated from adjacent memory cells by a trench (810). Each memory cell is formed by a stacking process layers on a substrate: tunnel oxide layer (815), polysilicon floating gate layer (819), ONO or oxide layer (822), polysilicon control gate layer (825). Many aspects of the process are self-aligned. An array of these memory cells will require less segmentation. Furthermore, the memory cell has enhanced programming characteristics because electrons are directed at a normal or nearly normal angle (843) to the floating gate (819).

REFERENCES:
patent: 5051796 (1991-09-01), Gill
patent: 5071782 (1991-12-01), Mori
patent: 5095344 (1992-03-01), Harari
patent: 5270979 (1993-12-01), Harari et al.
patent: 5278438 (1994-01-01), Kim et al.
patent: 5380672 (1995-01-01), Yuan et al.
patent: 5602987 (1997-02-01), Harari et al.
patent: 5617351 (1997-04-01), Bertin et al.
patent: 5712180 (1998-01-01), Guterman et al.
patent: 5807778 (1998-09-01), Lee
patent: 5991517 (1999-11-01), Harari et al.
patent: 6222762 (2001-04-01), Guterman et al.
patent: 6230233 (2001-05-01), Lofgren et al.
patent: 6232632 (2001-05-01), Liu
patent: 6248633 (2001-06-01), Ogura et al.
patent: 6268248 (2001-07-01), Mehrad
patent: 6429081 (2002-08-01), Doong et al.
patent: 6525369 (2003-02-01), Wu
patent: 6576537 (2003-06-01), Tseng
patent: 4233790 (1993-04-01), None
patent: 19649410 (1998-01-01), None
patent: WO97/32309 (1997-09-01), None
patent: WO02/25733 (2002-03-01), None
patent: WO2095829 (2002-11-01), None
EPO/ISA, “Communication Relating to the Results of the Partial International Search”, mailed in corresponding PCT/US2004/040324 on Apr. 4, 2005, 6 pages.
EPO/ISA, “Notification of Transmittal of the International Search Report and the Written Opinion of the International Searching Authority, or the Declaration”, mailed in corresponding PCT/US2004/040324 on May 25, 2005, 16 pages.

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