Piezoelectric-oscillator

Oscillators – Electromechanical resonator – Crystal

Reexamination Certificate

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Details

C331S03600C, C331S1160FE, C331S176000, C331S17700V, C257S312000

Reexamination Certificate

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07439819

ABSTRACT:
Deterioration in frequency stability with time in a conventional piezoelectric oscillator using an accumulation type MOS capacitance element is improved. A P-channel transistor type or an N-channel transistor type is used as a MOS capacitance element in a variable capacitance circuit used in a piezoelectric oscillator. A bias voltage is applied between P-type or N-type extraction electrodes formed in source and drain regions and an N-type extraction electrode provided in an N-well region or a P-type extraction electrode provided in a P-well region. Instability in the MOS capacitance element with time is thus eliminated.

REFERENCES:
patent: 4851792 (1989-07-01), Ochiai
patent: 6040744 (2000-03-01), Sakurai
patent: 6320474 (2001-11-01), Kamiya et al.
patent: 6734747 (2004-05-01), Ishikawa et al.
patent: 2004/0056725 (2004-03-01), Kitamura et al.
patent: 100 50 641 (2001-04-01), None
patent: 61-95104 (1986-06-01), None
patent: 2000-252480 (2000-09-01), None
patent: 2001-60868 (2001-03-01), None
patent: 2002-57526 (2002-02-01), None

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