Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1994-05-27
1997-05-06
Breneman, R. Bruce
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419222, 20419215, 427100, 4271263, 4273762, 4274193, 427559, 427545, C23C 1434, B05D 512
Patent
active
056267282
ABSTRACT:
A piezoelectric device, such as a surface acoustic wave filter, comprises a piezoelectric film composed of a lead zirconium titanate compound applied to a substrate formed of silicon or gallium arsenide. The device includes an intermediate film between the piezoelectric film and the substrate and composed of a lead-free zirconium titanate compound to prevent interaction between lead oxide in the piezoelectric material and the material of the substrate that would otherwise cause spilling or adversely effect the electrical properties of the substrate. The piezoelectric device is made by first applying the film of the lead-free zirconium titanate compound and thereafter applying the film of the lead zirconium titanate compound. Preferably, the lead-free zirconium titanate film is applied by sputtering and annealed to densify the material and increase the dielectric constant prior to depositing the piezoelectric material.
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Howng Wei-Yean
Ramakrishnan Ed S.
Breneman R. Bruce
Fekete Douglas D.
McDonald Rodney G.
Motorola Inc.
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