Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-03-06
2007-03-06
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S310000, C257S306000
Reexamination Certificate
active
10662472
ABSTRACT:
In a piezoelectric element having a piezoelectric film sandwiched between a lower electrode and an upper electrode, the lower electrode and/or the upper electrode and the piezoelectric film comprise perovskite oxide and a contact interface between the lower electrode and/or the upper electrode and the piezoelectric film does not exist and a region where crystals of the lower electrode and/or the upper electrode and crystals of the piezoelectric film are mixed exists between the lower electrode and/or the upper electrode and the piezoelectric film.
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Kobayashi Motokazu
Kubota Makoto
Maeda Kenji
Shimizu Chiemi
Suzuki Hisao
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Fuji Chemical Co. Ltd
Lee Eugene
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