Piezoelectric device and method of manufacturing the same

Details Piezoelectric device and method of manufacturing the same Piezoelectric device and method of manufacturing the same

1997-11-25

1999-11-09

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

H01L 2984

Patent

active

059820101

ABSTRACT:
A piezoelectric device is manufactured by: (1) mirror finishing surfaces of a first substrate and a second substrate made of a piezoelectric element; (2) forming grooves on at least one of the two surfaces of the first and second substrates; (3) joining the mirror-finished surfaces of the first substrate and the second substrate; (4) applying heat to the joined substrates and bonding them; (5) forming an opening on the first substrate so that a part of the exposed areas of the second substrate is exposed through the opening; (6) forming piezoelectric devices by forming electrodes on at least one of the second substrate through the opening and a corresponding area to the exposed area on the rear side of the second substrate; and (7) dividing the bonded substrates into portions each having one of the piezoelectric devices. Through this manufacturing method, piezoelectric devices with high yield ratios and high reliability can be obtained.

REFERENCES:
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patent: 5199298 (1993-04-01), Ng et al.
patent: 5342648 (1994-08-01), Mackenzie et al.
patent: 5441803 (1995-08-01), Meissner
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patent: 5747857 (1998-05-01), Eda et al.
Abstract of JP 60-121715; Bonding Method for Semiconductor Wafer; Jun. 29, 1995; Toshiba K.K. *abstract*.
Abstract of JP 62-292412; Method for Junction of Semiconductor Substrate; Dec. 23, 1987; Toshiba Corp. *abstract*.

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