Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal
Reexamination Certificate
2007-08-07
2007-08-07
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
C257S415000, C257S417000, C257S418000, C438S048000, C438S050000, C438S052000
Reexamination Certificate
active
11031320
ABSTRACT:
A piezo-TFT cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method comprises: providing a substrate, such as glass for example; forming thin-films overlying the substrate; forming a thin-film cantilever beam; and simultaneously forming a TFT within the cantilever beam. The TFT is can be formed least partially overlying a cantilever beam top surface, at least partially overlying a cantilever beam bottom surface, or embedded within the cantilever beam. In one example, forming thin-films on the substrate includes: selectively forming a first layer with a first stress level; selectively forming a first active Si region overlying the first layer; and selectively forming a second layer overlying the first layer with a second stress level. The thin-film cantilever beam is formed from the first and second layers, while the TFT source/drain (S/D) and channel regions are formed from the first active Si region.
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Vinayak P Dravid and Gajendra S Shekhawat; “MOSFET Integrated Microcantilevers for Novel Electronic Detection of “On-Chip” Molecular Interactions”, Material Science, Northwestern University, Evanston, Illinois, Apr. 14, 2004.
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Hartzell John W.
Wolfson Michael Barrett
Zhan Changqing
Law Office of Gerald Maliszewski
Le Dung A.
Maliszewski Gerald
Sharp Laboratories of America Inc.
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