Piezo-driven non-volatile memory cell with hysteretic...

Details Piezo-driven non-volatile memory cell with hysteretic... Piezo-driven non-volatile memory cell with hysteretic...

2008-09-19

2010-12-07

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetostrictive or piezoelectric

C365S163000, C365S189190, C029S025350

Reexamination Certificate

active

07848135

ABSTRACT:
A piezoelectrically programmed, non-volatile memory cell structure includes a programmable piezo-resistive hysteretic material (PRHM) that is capable of being interconverted between a low resistance state and high resistance state through applied pressure cycling thereto; a piezoelectric material mechanically coupled to the PRHM such that an applied voltage across the piezoelectric material results in one of a tensile or compressive stress applied to the PRHM, depending upon the polarity of the applied voltage; and one or more electrodes in electrical communication with the PRHM, wherein the one or more electrodes are configured to provide a write programming current path through the piezoelectric material and a read current path through the PRHM.

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