Physical vapor deposition plasma reactor with VHF source...

Details Physical vapor deposition plasma reactor with VHF source... Physical vapor deposition plasma reactor with VHF source...

2007-07-17

2007-07-17

McDonald, Rodney G. (Department: 1753)

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

C204S298060, C204S298080, C204S298140

Reexamination Certificate

active

11140514

ABSTRACT:
A physical vapor deposition plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber, a process gas inlet coupled to the chamber and a process gas source coupled to the process gas inlet, a metal sputter target at the ceiling, a high voltage D.C. source coupled to the sputter target, an RF plasma source power generator coupled to the wafer support pedestal and having a frequency in a range between about 60 MHz and 81 MHz, and an RF plasma bias power generator coupled to the wafer support pedestal and having a frequency suitable for coupling energy to plasma ions.

REFERENCES:
patent: 3461054 (1969-08-01), Vratney
patent: 3661758 (1972-05-01), Jackson et al.
patent: 3681277 (1972-08-01), Szupillo
patent: 4539068 (1985-09-01), Takagi et al.
patent: 4714536 (1987-12-01), Freeman et al.
patent: 4837185 (1989-06-01), Yau et al.
patent: 4874494 (1989-10-01), Ohmi
patent: 4963239 (1990-10-01), Shimamura et al.
patent: 4999096 (1991-03-01), Nihei et al.
patent: 5110438 (1992-05-01), Ohmi et al.
patent: RE34106 (1992-10-01), Ohmi
patent: 5252194 (1993-10-01), Demaray
patent: 5308793 (1994-05-01), Taguchi et al.
patent: 5362672 (1994-11-01), Ohmi et al.
patent: 5486492 (1996-01-01), Yamamoto et al.
patent: 5507930 (1996-04-01), Yamashita et al.
patent: 5510011 (1996-04-01), Okamura et al.
patent: 5639691 (1997-06-01), Klein et al.
patent: 5656123 (1997-08-01), Salimian et al.
patent: 5728278 (1998-03-01), Okamura et al.
patent: 5933753 (1999-08-01), Simon et al.
patent: 5933973 (1999-08-01), Fenley, Jr.
patent: 5976327 (1999-11-01), Tanaka
patent: 5986762 (1999-11-01), Challener
patent: 6051114 (2000-04-01), Yao et al.
patent: 6080285 (2000-06-01), Liu et al.
patent: 6197167 (2001-03-01), Tanaka
patent: 6221221 (2001-04-01), Al-Shaikh et al.
patent: 6228236 (2001-05-01), Rosenstein et al.
patent: 6251242 (2001-06-01), Fu et al.
patent: 6274008 (2001-08-01), Gopalraja et al.
patent: 6277249 (2001-08-01), Gopalraja et al.
patent: 6283357 (2001-09-01), Kulkarni et al.
patent: 6287977 (2001-09-01), Hashim et al.
patent: 6309978 (2001-10-01), Donohoe et al.
patent: 6350353 (2002-02-01), Gopalraja et al.
patent: 6352620 (2002-03-01), Yu et al.
patent: 6377060 (2002-04-01), Burkhart et al.
patent: 6436251 (2002-08-01), Gopalraja et al.
patent: 6444104 (2002-09-01), Gopalraja et al.
patent: 6444137 (2002-09-01), Collins et al.
patent: 6451177 (2002-09-01), Gopalraja et al.
patent: 6458252 (2002-10-01), Russell
patent: 6462482 (2002-10-01), Wickramanayaka et al.
patent: 6485617 (2002-11-01), Fu et al.
patent: 6485618 (2002-11-01), Gopalraja et al.
patent: 6488807 (2002-12-01), Collins et al.
patent: 6498091 (2002-12-01), Chen et al.
patent: 6518195 (2003-02-01), Collins et al.
patent: 6545420 (2003-04-01), Collins et al.
patent: 6554979 (2003-04-01), Stimson
patent: 6559061 (2003-05-01), Hashim et al.
patent: 6652718 (2003-11-01), D'Couto et al.
patent: 6660622 (2003-12-01), Chen et al.
patent: 6709987 (2004-03-01), Hashim et al.
patent: 6755945 (2004-06-01), Yasar et al.
patent: 6787006 (2004-09-01), Gopalraja et al.
patent: 2001/0023822 (2001-09-01), Koizumi et al.
patent: 2001/0050220 (2001-12-01), Chiang et al.
patent: 2002/0004309 (2002-01-01), Collins et al.
patent: 2002/0104751 (2002-08-01), Drewery et al.
patent: 2003/0116427 (2003-06-01), Ding et al.
patent: 2004/0025791 (2004-02-01), Chen et al.
patent: 2004/0152301 (2004-08-01), Hashim et al.
patent: 2004/0188239 (2004-09-01), Robison et al.
patent: 2005/0056536 (2005-03-01), Gopalraja et al.
patent: 2005/0074968 (2005-04-01), Chen et al.
patent: 2006/0073283 (2006-04-01), Brown et al.
patent: 2006/0073690 (2006-04-01), Brown et al.
patent: 0782172 (1997-02-01), None
patent: 0799903 (1997-08-01), None
patent: 0807954 (1997-11-01), None
patent: 0841683 (1998-05-01), None
patent: 0878825 (1998-11-01), None
patent: 1094493 (2001-04-01), None
patent: 1128414 (2001-08-01), None
patent: 1146543 (2001-10-01), None
Boyle, P.C., et al., “Independent control of ion current and ion impact energy onto electrodes in dual frequency plasma devices”,Journal of Physics D: Applied Physics, 2004, pp. 697-701, vol. 37, Institute of Physics Publishing, United Kingdom.
Wickramanayaka, S., et al., “Using I-PVD for copper-based interconnects,”Solid State Technology, Oct. 2002, pp. 67-74.

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