Physical vapor deposition chamber

Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

20429825, 20429802, 2041921, 20419212, C23C 1400

Patent

active

059353970

ABSTRACT:
A physical vapor deposition chamber assembly is provided for use in depositing metal particles onto a wafer placed inside the chamber assembly. The physical vapor deposition assembly includes a chamber having an opening, and a target containing a desired metal to be deposited on a wafer placed inside the chamber, with the target adapted to be secured at the opening of the chamber. The assembly further includes an insulator positioned along the boundary of the opening, and having opposing first and second surfaces, with the second surface having a ridge extending therealong and defining a narrow horizontal ridge surface. A first O-ring is positioned between the first surface of the insulator and the chamber along the boundary of the opening, and a second O-ring is positioned between the ridge surface of the insulator and the target.

REFERENCES:
patent: 3830721 (1974-08-01), Gruen et al.
patent: 3878085 (1975-04-01), Corbani
patent: 4198283 (1980-04-01), Class et al.
patent: 4761218 (1988-08-01), Boys
patent: 5112469 (1992-05-01), Kempf et al.
patent: 5328582 (1994-07-01), Cole
patent: 5330628 (1994-07-01), Demaray et al.
patent: 5690795 (1997-11-01), Rosenstein et al.
patent: 5772858 (1998-06-01), Tepman

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Physical vapor deposition chamber does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Physical vapor deposition chamber, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Physical vapor deposition chamber will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1116510

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.